1·Why is high purity polycrystalline silicon necessary?
为啥多晶硅需要高纯度？
2·Polycrystalline silicon is a kind of form of monatomic silicon.
多晶硅是单质硅的一种形态。
3·Polycrystalline silicon is an aggregation of small silicon crystals.
多晶硅是细小硅晶的集合体。
4·Heating chamber is pivotal part of the polycrystalline silicon ingot production furnace.
前言：加热室是多晶硅铸锭炉的关键部件之一。
5·Heating chamber is pivotal part of the polycrystalline silicon ingot production furnace.
加热室是多晶硅铸锭炉的关键部件之一。
6·A new method to improve the temperature dependence of polycrystalline silicon pressure sensor is presented.
提出了一种新的改善传感器温度特性的方法。
7·Technique process of growth of the polycrystalline silicon is based on the adjustment of the heating chamber.
多晶硅锭的生长工艺过程都要通过加热室的调整来实现。
8·The effect of thin film piezoresistive property related with deposit condition on polycrystalline silicon is studied.
着重研究了沉积工艺条件对多晶硅薄膜压阻灵敏度系数的影响。
9·Low temperature polycrystalline silicon thin film transistors (LTPS TFTs) are widely used in the flat panel displays.
低温多晶硅薄膜晶体管(LTPS TFT)广泛应用于平板显示。
10·At last, we use the PC1D program to simulate polycrystalline silicon thin film solar cells prepared under high temperature.
最后，采用PC1D电池模拟软件对高温路线制备的多晶硅薄膜电池进行了理论模拟。
1·At last, we use the PC1D program to simulate polycrystalline silicon thin film solar cells prepared under high temperature.
最后，采用PC1D电池模拟软件对高温路线制备的多晶硅薄膜电池进行了理论模拟。
2·Heating chamber is pivotal part of the polycrystalline silicon ingot production furnace.
前言：加热室是多晶硅铸锭炉的关键部件之一。
3·Technique process of growth of the polycrystalline silicon is based on the adjustment of the heating chamber.
多晶硅锭的生长工艺过程都要通过加热室的调整来实现。
4·Polycrystalline silicon thin film solar cell by RTCVD on SSP substrate is prepared so as to simplify the process and lower the cost.
从简化步骤、降低成本的角度出发，采用快速热化学气相沉积（RTCVD）法在低纯颗粒带硅（SSP）衬底上制备出了多晶硅薄膜太阳电池。
5·Heating chamber is pivotal part of the polycrystalline silicon ingot production furnace.
加热室是多晶硅铸锭炉的关键部件之一。